| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,100 pcs
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7100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The Vishay Siliconix SQJ963EP-T1_GE3 is a high-performance dual P-Channel MOSFET. It features a 60V drain-source voltage rating and a continuous drain current of 8A per leg at 25°C.
This MOSFET is built on Vishay's TrenchFET® technology, offering low Rds(on) of 85mOhm at 3.5A and 10V Vgs. It is designed for operation up to 175°C, making it suitable for high-temperature environments. The device is packaged in a PowerPAK® SO-8 Dual surface-mount package.
Key electrical characteristics include an input capacitance of 1140pF and a gate charge of 40nC. The gate threshold voltage is 2.5V at 250µA. The device is also tested for 100% Rg and UIS, and is AEC-Q101 qualified.
This MOSFET is compliant with RoHS Directive 2002/95/EC and is halogen-free. Its robust design and specifications make it suitable for various automotive and industrial applications requiring reliable power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the SQJ963EP-T1_GE3 is 60V.
The typical Rds(on) at Vgs = -10V for the SQJ963EP-T1_GE3 is 0.085 Ohms.
The continuous drain current rating for the SQJ963EP-T1_GE3 is 8A per leg at 25°C.
The operating junction and storage temperature range for the SQJ963EP-T1_GE3 is -55°C to +175°C.
The SQJ963EP-T1_GE3 MOSFET is supplied in a PowerPAK® SO-8 Dual package.
The SQJ963EP-T1_GE3 is listed as RoHS3 Compliant.
Yes, the SQJ963EP-T1_GE3 is halogen-free.