| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQJ956EP-T1_GE3 is a high-performance Dual N-Channel MOSFET. It is AEC-Q101 qualified and features TrenchFET® power MOSFET technology.
Key electrical specifications include a 60V drain-source voltage (VDS) and a maximum continuous drain current of 23A per leg at 25°C. The on-resistance (RDS(on)) is as low as 26.7mOhm at a gate-source voltage of 10V and a drain current of 5.2A. The device also offers a gate charge (Qg) of 30nC at 10V.
This MOSFET operates over a wide temperature range of -55°C to 175°C (TJ). It is housed in a PowerPAK® SO-8 Dual package, suitable for surface mounting. The device is lead (Pb)-free and halogen-free, meeting RoHS3 compliance standards.
With its robust design and reliable performance, the SQJ956EP-T1_GE3 is suitable for various automotive and industrial applications requiring efficient power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
PowerPAK SO-8 Dual, surface mount.
-55°C to +175°C (junction temperature).
23A at case temperature 25°C; 13A at 125°C.
26.7 mOhm maximum.
Yes.
Yes.