| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,575 pcs
|
2575 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQJ952EP-T1_GE3 is a dual N-channel MOSFET featuring TrenchFET® power MOSFET technology. It is AEC-Q101 qualified and 100% R_g and UIS tested, ensuring high reliability for automotive applications.
This MOSFET operates with a drain-source voltage (Vds) of 60V and offers a low on-resistance (Rds(on)) of 20mOhm at 10.3A and 10V Vgs. The continuous drain current is rated at 23A at 25°C case temperature. It is packaged in a PowerPAK® SO-8 Dual surface mount package.
Key electrical characteristics include an input capacitance (Ciss) of 1800pF at 30V and a gate charge (Qg) of 30nC at 10V. The operating junction and storage temperature range is from -55°C to +175°C. The device is also RoHS3 compliant and halogen-free.
With its robust construction and reliable performance, the SQJ952EP-T1_GE3 is suitable for various power management applications where efficiency and space are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 60 V.
It is available in the PowerPAK SO-8 Dual package.
The operating junction temperature range is -55°C to +175°C.
The continuous drain current is 23 A at 25°C case temperature.
The maximum on-resistance is 20 milliohms at 10.3A drain current and 10V gate voltage.
The maximum gate charge is 30 nC at 10V gate voltage.
The maximum gate threshold voltage is 2.5 V at 250 µA drain current.