| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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19,020 pcs
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19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQJ951EP-T1_GE3 is a high-performance dual P-Channel MOSFET with a TrenchFET Power MOSFET design. It is AEC-Q101 qualified, indicating its suitability for automotive applications. The device offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 30A at 25°C, with a reduced rating of 28A at 125°C.
Key electrical characteristics include a low on-resistance (Rds(on)) of 17mOhm at 7.5A and 10V Vgs, and 36mOhm at Vgs = -4.5V. The input capacitance (Ciss) is 1680pF at 10V, and the gate charge (Qg) is 50nC at 10V. The threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA.
This MOSFET operates over a wide temperature range from -55°C to 175°C (TJ) and has a maximum power dissipation of 56W at 25°C. It is housed in a PowerPAK SO-8 Dual surface mount package. The component is 100% Rg and UIS tested, and material categorization is available for compliance definitions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 30V.
The operating junction and storage temperature range is -55°C to 175°C.
The MOSFET comes in a PowerPAK SO-8 Dual surface-mount package.
The maximum continuous drain current is 30A at 25°C case temperature and 28A at 125°C.
The Rds(on) is 17mOhm maximum at 7.5A and 10V gate drive, and 36mOhm maximum at Vgs = -4.5V.
The maximum gate threshold voltage is 2.5V at a drain current of 250µA.
The maximum power dissipation is 56W at 25°C case temperature, derating to 18.5W at 125°C.