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SQJ940EP-T1_GE3 Dual N-channel MOSFET array rated for 40V and 15A continuous drain current. Suitable for power switching applications in compact PPAK SO-8 package.
Mfr Part #:

SQJ940EP-T1_GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
Dual N-channel MOSFET array rated for 40V and 15A continuous drain current. Suitable for power switching applications in compact PPAK SO-8 package.
✓ Total Stock: 4,351 pcs
$ Price Range: $1.64

SQJ940EP-T1_GE3 Available from 1 distributor

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✓ Non-Authorised
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Smaxon Electronics ✓
Non-Authorised Inventory information
4,351 pcs
On Request
4351 pcs On Request 1 On Request On Request 21+ On Request On Request
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SQJ940EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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SQJ940EP-T1_GE3 Description

Short technical summary and product information.

The SQJ940EP-T1_GE3 is a dual N-channel MOSFET array from Vishay Dale, housed in a PowerPAK SO-8 package. It features two independent N-channel MOSFETs with a drain-source voltage rating of 40V and a gate-source voltage range of ±20V. At a case temperature of 25°C, the continuous drain current is 15A for channel 1 and 18A for channel 2, with pulsed drain current capabilities of 60A and 72A respectively. The on-resistance is 16mOhm for channel 1 and 6.4mOhm for channel 2 at a gate-source voltage of 10V.

 

The device is avalanche rated, with single pulse avalanche energy of 21mJ for channel 1 and 63mJ for channel 2. Maximum power dissipation at 25°C is 48W for channel 1 and 43W for channel 2, derated to 16W and 14W at 125°C. The operating junction and storage temperature range is -55°C to 175°C. Thermal resistance junction-to-case is 3.3°C/W for channel 1 and 3.5°C/W for channel 2, with junction-to-ambient (PCB mount) at 70°C/W.

 

This MOSFET array is designed for power management applications such as DC-DC converters, load switches, and motor control. The PowerPAK SO-8 package offers a compact footprint with excellent thermal performance, making it suitable for space-constrained designs.

SQJ940EP-T1_GE3 Quick Information

Product Type: MOSFET Array
Canonical Name: SQJ940EP-T1_GE3 MOSFET Array
Subcategory: N-Channel MOSFET Array

SQJ940EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQJ940EP-T1_GE3 Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ940EP-T1_GE3 Features

  • Dual N-channel MOSFET in one package.
  • Rated for 40V drain-source voltage.
  • Low on-resistance down to 6.4mOhm.
  • High continuous drain current up to 18A.
  • Avalanche energy rated up to 63mJ.

SQJ940EP-T1_GE3 Applications

  • Ideal for DC-DC converter designs.
  • Used in power management circuits.
  • Suitable for motor control applications.
  • Applicable in battery protection systems.

SQJ940EP-T1_GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

40V.

What is the package type?

PPAK SO-8 (PowerPAK SO-8).

What is the operating temperature range?

-55°C to 175°C.

What is the continuous drain current?

15A for N-Channel 1 and 18A for N-Channel 2 at Tc=25°C.

What is the on-resistance?

16mOhm for N-Channel 1 and 6.4mOhm for N-Channel 2 at Vgs=10V.

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