SQJ886EP-T1_GE3 The Vishay SQJ886EP-T1_GE3 is an automotive-grade N-Channel MOSFET designed for high-performance applications. It offers a 40V drain-source voltage and a continuous drain current of 60A.
Mfr Part #:

SQJ886EP-T1_GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay SQJ886EP-T1_GE3 is an automotive-grade N-Channel MOSFET designed for high-performance applications. It offers a 40V drain-source voltage and a continuous drain current of 60A.
✓ Total Stock: 313,020 pcs
$ Price Range: $0.70

SQJ886EP-T1_GE3 Available from 1 distributor

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✓ Non-Authorised
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SQJ886EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQJ886EP-T1_GE3 Description

Short technical summary and product information.

The Vishay SQJ886EP-T1_GE3 is a TrenchFET Power MOSFET designed for automotive applications, featuring AEC-Q101 qualification. This N-Channel MOSFET operates with a 40V drain-source voltage and can handle a continuous drain current of up to 60A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance of 4.5mOhm at Vgs = 10V and 5.5mOhm at Vgs = 4.5V, with a gate threshold voltage of 2.5V. The device boasts a high continuous drain current capability and is tested 100% for Rg and UIS.

 

Packaged in a PowerPAK SO-8, this surface-mount MOSFET is suitable for demanding thermal environments, with a maximum power dissipation of 55W at 25°C and an operating junction temperature range of -55°C to 175°C. Its robust design and qualification make it ideal for power management solutions in automotive systems.

SQJ886EP-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Automotive N-Channel 40 V (D-S) 175 °C MOSFET
Subcategory: Single

SQJ886EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQJ886EP-T1_GE3 Estimated Pricing

Qty Low High
1+ $0.70 $0.70

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ886EP-T1_GE3 Features

  • Automotive N-Channel 40V MOSFET
  • Low Rds(on) of 4.5mOhm at 10V Vgs
  • High continuous drain current of 60A
  • PowerPAK SO-8 surface mount package
  • AEC-Q101 Qualified

SQJ886EP-T1_GE3 Applications

  • Ideal for automotive power systems
  • Suitable for high-current switching
  • Efficient power management solutions
  • Designed for demanding thermal loads

SQJ886EP-T1_GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SQJ886EP-T1_GE3 MOSFET?

The maximum drain-source voltage (Vds) for the SQJ886EP-T1_GE3 MOSFET is 40V.

What is the continuous drain current rating of the SQJ886EP-T1_GE3?

The SQJ886EP-T1_GE3 has a continuous drain current rating of 60A at 25°C case temperature.

What is the typical on-resistance (Rds(on)) for the SQJ886EP-T1_GE3?

The Rds(on) is 4.5mOhm at 15.3A drain current and 10V gate-source voltage.

What is the operating temperature range for the SQJ886EP-T1_GE3?

The operating junction and storage temperature range for this MOSFET is -55°C to 175°C.

What package type is the SQJ886EP-T1_GE3 MOSFET supplied in?

The SQJ886EP-T1_GE3 is supplied in a PowerPAK SO-8 package.

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