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313,020 pcs
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313020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay SQJ886EP-T1_GE3 is a TrenchFET Power MOSFET designed for automotive applications, featuring AEC-Q101 qualification. This N-Channel MOSFET operates with a 40V drain-source voltage and can handle a continuous drain current of up to 60A at 25°C case temperature.
Key electrical characteristics include a low on-resistance of 4.5mOhm at Vgs = 10V and 5.5mOhm at Vgs = 4.5V, with a gate threshold voltage of 2.5V. The device boasts a high continuous drain current capability and is tested 100% for Rg and UIS.
Packaged in a PowerPAK SO-8, this surface-mount MOSFET is suitable for demanding thermal environments, with a maximum power dissipation of 55W at 25°C and an operating junction temperature range of -55°C to 175°C. Its robust design and qualification make it ideal for power management solutions in automotive systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.70 | $0.70 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the SQJ886EP-T1_GE3 MOSFET is 40V.
The SQJ886EP-T1_GE3 has a continuous drain current rating of 60A at 25°C case temperature.
The Rds(on) is 4.5mOhm at 15.3A drain current and 10V gate-source voltage.
The operating junction and storage temperature range for this MOSFET is -55°C to 175°C.
The SQJ886EP-T1_GE3 is supplied in a PowerPAK SO-8 package.