SQJ872EP-T1_GE3 The Vishay Dale SQJ872EP-T1_GE3 is a 150V N-Channel MOSFET designed for power applications. It features a low on-resistance and a compact PowerPAK SO-8 package.
Mfr Part #:

SQJ872EP-T1_GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQJ872EP-T1_GE3 is a 150V N-Channel MOSFET designed for power applications. It features a low on-resistance and a compact PowerPAK SO-8 package.
✓ Total Stock: 26,377 pcs
$ Price Range: $2.56

SQJ872EP-T1_GE3 Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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19,020 pcs
19020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Non-Authorised Inventory information
1,357 pcs
1357 pcs On Request 1 On Request On Request On Request On Request On Request

SQJ872EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Forward Voltage
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQJ872EP-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQJ872EP-T1_GE3 is an N-Channel Power MOSFET designed for demanding applications requiring high performance and reliability. It offers a maximum drain-source voltage of 150V and a continuous drain current of 24.5A at 25°C.

 

This MOSFET boasts a low on-resistance of 35.5mOhm at 10A and 10V gate drive, minimizing conduction losses and improving efficiency. The operating temperature range is -55°C to 175°C, making it suitable for harsh environments. The TrenchFET® technology and AEC-Q101 qualification ensure robust performance.

 

Packaged in a PowerPAK SO-8L, this surface-mount device is designed for efficient heat dissipation with a junction-to-case thermal resistance of 2.7°C/W. Its compact size and high power handling capabilities make it ideal for various power management solutions.

 

Key electrical characteristics include a gate-source voltage range of ±20V and a gate threshold voltage of 3.5V at 250µA. The input capacitance is 1045pF at 25V, and the typical gate charge is 14nC at 10V.

SQJ872EP-T1_GE3 Quick Information

Product Type: MOSFET
Series: SQJ872EP
Canonical Name: Vishay Siliconix SQJ872EP N-Channel MOSFET
Subcategory: N-Channel

SQJ872EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQJ872EP-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ872EP-T1_GE3 Features

  • 150V drain-source voltage rating.
  • 24.5A continuous drain current.
  • Low 35.5mOhm Rds On.
  • AEC-Q101 qualified automotive grade.
  • PowerPAK SO-8L surface mount package.

SQJ872EP-T1_GE3 Applications

  • Ideal for power supply circuits.
  • Suitable for motor control applications.
  • Used in automotive systems.
  • Efficient power management solutions.

SQJ872EP-T1_GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SQJ872EP-T1_GE3?

The maximum drain-source voltage is 150 V.

What is the continuous drain current of the SQJ872EP-T1_GE3?

The continuous drain current is 24.5A at 25°C.

What is the on-resistance of the SQJ872EP-T1_GE3?

The on-resistance is a maximum of 35.5mOhm at 10A and 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C.

What package type is the SQJ872EP-T1_GE3 MOSFET supplied in?

It is supplied in a PowerPAK SO-8L package.

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