Mfr Part #:

SQJ860EP-T1_GE3

Mfr Name: Vishay

The Vishay Dale SQJ860EP-T1_GE3 is an N-Channel Power MOSFET designed for demanding applications. It offers a 40V drain-source voltage and a continuous drain current of 60A.

✓ Total Stock: 120,070 pcs

$ Price Range: $2.56

SQJ860EP-T1_GE3 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	120,000 pcs On Request	120000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
PROSOFT ELECTRONICS ✓ Non-Authorised Inventory information	70 pcs On Request	70 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SQJ860EP-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQJ860EP-T1_GE3 is an N-Channel MOSFET featuring TrenchFET power technology. It is rated for a drain-source voltage (Vds) of 40V and can handle a continuous drain current (Id) of 60A at 25°C case temperature, with a maximum power dissipation of 48W. The MOSFET exhibits a low on-resistance (Rds(on)) of 6mOhm at 10A and 10V Vgs.

This device operates within a junction temperature range of -55°C to 175°C. It is housed in a surface-mount PowerPAK SO-8 package, suitable for various electronic designs. The MOSFET is AEC-Q101 qualified and 100% R_g and UIS tested, indicating its suitability for automotive applications.

Key electrical characteristics include an input capacitance (Ciss) of 2700 pF at 25V and a gate charge (Qg) of 55 nC at 10V Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA. The device is designed with a gate-source voltage (Vgs) limit of ±20V.

SQJ860EP-T1_GE3 Quick Information

Product Type: MOSFET

Canonical Name: Vishay Dale SQJ860EP-T1_GE3 N-Channel 40V Power MOSFET

SQJ860EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Lead (Pb)-free

SQJ860EP-T1_GE3 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ860EP-T1_GE3 Features

N-Channel TrenchFET power MOSFET.
40V drain-source voltage rating.
60A continuous drain current capability.
Low 6mOhm on-resistance.
Surface mount PowerPAK SO-8 package.

SQJ860EP-T1_GE3 Applications

Used in DC-DC converter and buck regulator circuits.
Ideal for load switching and power management systems.
Suitable for automotive and industrial power applications.
Employed in battery protection and charging circuits.

SQJ860EP-T1_GE3 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage (Vdss) of the SQJ860EP-T1_GE3?

40V.

What is the continuous drain current rating of this MOSFET?

60A at a case temperature of 25°C, derated to 36A at 125°C.

What is the on-resistance (Rds(on)) of the SQJ860EP-T1_GE3?

6mOhm maximum at Vgs = 10V and Id = 10A; 7.3mOhm maximum at Vgs = 4.5V.

What package is the SQJ860EP-T1_GE3 available in?

PowerPAK SO-8 surface-mount package.

What is the operating junction temperature range?

-55°C to 175°C.

Is the SQJ860EP-T1_GE3 lead-free and halogen-free?

Yes, it is lead-free and halogen-free.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	60A (Tc)
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Halogen Free	Halogen-free
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	48W (Tc)
Rds On (Max) @ Id, Vgs	6mOhm
Supplier Device Package	PowerPAK® SO-8
Supplier Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA