Mfr Part #:

SQJ858AEP-T1_GE3

Mfr Name: Vishay

The Vishay Dale SQJ858AEP-T1_GE3 is an N-Channel MOSFET designed for automotive applications. It features a 40V drain-source voltage and a continuous drain current of 58A.

✓ Total Stock: 62,241 pcs

$ Price Range: $2.56

SQJ858AEP-T1_GE3 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Seba Components ✓ Non-Authorised Inventory information	48,000 pcs On Request	48000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	13,020 pcs On Request	13020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	1,221 pcs On Request	1221 pcs	On Request	1	On Request	On Request	14+	On Request	On Request

SQJ858AEP-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQJ858AEP-T1_GE3 is an automotive-qualified N-Channel Power MOSFET utilizing TrenchFET technology. It offers a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 58A at 25°C case temperature.

Key electrical characteristics include a low on-resistance (Rds(on)) of 6.3mOhm at 14A and 10V Vgs, and 7.5mOhm at 14A and 4.5V Vgs. The gate charge (Qg) is 55nC maximum at 10V Vgs, and the input capacitance (Ciss) is 2450pF maximum at 20V Vds. The gate threshold voltage (Vgs(th)) is 2.5V maximum at 250µA.

This MOSFET operates within a junction temperature range of -55°C to 175°C. It is housed in a PowerPAK SO-8 surface-mount package. The device is 100% R_g and UIS tested, ensuring high reliability for demanding applications.

Absolute maximum ratings include a pulsed drain current (Idm) of 230A, a single pulse avalanche current (IAS) of 35A with 61mJ energy (EAS), and a maximum power dissipation (Pd) of 48W at 25°C case temperature.

SQJ858AEP-T1_GE3 Quick Information

Product Type: MOSFET

Canonical Name: Vishay Dale SQJ858AEP-T1_GE3 N-Channel 40V PowerPAK SO-8 MOSFET

Subcategory: Power MOSFET

SQJ858AEP-T1_GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SQJ858AEP-T1_GE3 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ858AEP-T1_GE3 Features

Automotive N-Channel 40V MOSFET
TrenchFET Power MOSFET technology
AEC-Q101 Qualified
Low Rds(on) of 6.3mOhm
PowerPAK SO-8 package

SQJ858AEP-T1_GE3 Applications

Ideal for automotive power systems
Suitable for high-current switching
Efficient power management solutions
Used in demanding electronic circuits

SQJ858AEP-T1_GE3 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage of the SQJ858AEP-T1_GE3 MOSFET?

The drain-source voltage (Vds) is 40V.

What is the maximum continuous drain current for the SQJ858AEP-T1_GE3?

The continuous drain current is 58A at a case temperature of 25°C.

What is the on-resistance of the SQJ858AEP-T1_GE3 at 10V Vgs?

The Rds(on) is a maximum of 6.3mOhm at 14A and 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the SQJ858AEP-T1_GE3 MOSFET supplied in?

It is supplied in a PowerPAK SO-8 package.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
AEC Qualified	Yes
Automotive Grade	Yes
Current	58A (Tc)
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2450 pF @ 20 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	48W (Tc)
Rds On (Max) @ Id, Vgs	6.3 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5 V @ 250µA