| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31,020 pcs
|
31020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQJ500AEP-T1_GE3 is an automotive-qualified N- and P-channel dual MOSFET array designed for high-performance applications. It features TrenchFET® power MOSFET technology and is 100% Rg and UIS tested.
This device boasts a 40V drain-source voltage and a continuous drain current of 30A at 25°C case temperature. The on-resistance (RDS(on)) is as low as 0.0270Ω at 6A, 10V. It operates across a wide temperature range of -55°C to 175°C (TJ).
The MOSFET array is housed in a PowerPAK® SO-8 Dual package, suitable for surface mounting. Its thermal characteristics include a junction-to-case thermal resistance of 3.1°C/W. The AEC-Q101 qualification indicates its suitability for demanding automotive environments.
Key electrical parameters include an input capacitance of 1850pF at 20V and a gate charge of 38.1nC at 10V. The device is designed for reliability and performance in power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The continuous drain current is 30A at 25°C case temperature.
The operating junction and storage temperature range is -55°C to 175°C.
It is in a PowerPAK SO-8 Dual package.
The mounting type is Surface Mount.
The RDS(on) is 0.0270Ω at 6A, 10V.