| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,124 pcs
|
1124 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The Vishay Dale SQJ488EP-T1_GE3 is an automotive-qualified N-Channel Power MOSFET designed for high-performance applications. It features TrenchFET® technology and is AEC-Q101 qualified, ensuring reliability.
Key electrical specifications include a maximum drain-source voltage of 100V and a continuous drain current of 42A at 25°C case temperature. The Rds On is as low as 0.021 Ohm at a gate-source voltage of 10V, and 0.0258 Ohm at 4.5V. The device offers a maximum power dissipation of 83W at 25°C case temperature.
This MOSFET is housed in a PowerPAK® SO-8 package, suitable for surface mounting. It operates across a wide temperature range from -55°C to 175°C. The component is 100% Rg and UIS tested for enhanced quality assurance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
42A.
0.021 Ohm at 10V gate drive.
2.5V at 250µA.
-55°C to 175°C.
PowerPAK SO-8 surface-mount package.
27nC at 10V.