| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,319 pcs
|
1319 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The Vishay Dale SQJ488EP-T1_BE3 is a high-performance N-Channel power MOSFET designed for demanding applications. It features a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 42A at 25°C case temperature.
This MOSFET utilizes Vishay's TrenchFET® technology, offering low on-resistance (Rds(on)) of 21mOhm at 10V Vgs and 42A Id, and 25.8mOhm at 4.5V Vgs. The gate charge (Qg) is 27 nC at 10V Vgs, and the input capacitance (Ciss) is 978 pF at 50V Vds.
With a maximum power dissipation of 83W (Tc=25°C) and an operating temperature range of -55°C to 175°C, the SQJ488EP-T1_BE3 is suitable for high-power applications. It is AEC-Q101 qualified and 100% Rg and UIS tested, ensuring reliability.
The component is housed in a PowerPAK® SO-8 surface-mount package, facilitating efficient board space utilization and thermal management. Its lead-free and halogen-free construction aligns with environmental compliance standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
PowerPAK SO-8 surface-mount package.
-55°C to 175°C junction temperature.
42A at 25°C case temperature, 24A at 125°C.
21mOhm maximum.
2.5V maximum at 250µA.