SQJ486EP-T1_GE3 The Vishay Dale SQJ486EP-T1_GE3 is an N-Channel MOSFET designed for demanding applications. It offers a 75V drain-source voltage and a continuous drain current of 30A.
Mfr Part #:

SQJ486EP-T1_GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQJ486EP-T1_GE3 is an N-Channel MOSFET designed for demanding applications. It offers a 75V drain-source voltage and a continuous drain current of 30A.
✓ Total Stock: 62,026 pcs
$ Price Range: $2.56

SQJ486EP-T1_GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SQJ486EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQJ486EP-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQJ486EP-T1_GE3 is an N-Channel MOSFET featuring TrenchFET power technology. It is rated for a maximum drain-source voltage of 75V and a continuous drain current of 30A at 25°C. The MOSFET exhibits a low on-resistance of 26mOhm at 10V Vgs and 51A Id.

 

This device operates within a temperature range of -55°C to 175°C. It is housed in a PowerPAK SO-8 package, suitable for surface mounting. The MOSFET is AEC-Q101 qualified and 100% Rg and UIS tested, indicating its suitability for automotive applications.

 

Key electrical characteristics include an input capacitance of 1386pF at 15V and a gate charge of 34nC at 10V. The maximum power dissipation is 56W at 25°C. The device is RoHS3 compliant and has an MSL rating of 1.

SQJ486EP-T1_GE3 Quick Information

Product Type: MOSFET
Series: SQJ
Canonical Name: Vishay SQJ486EP-T1_GE3 N-Channel 75V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SQJ486EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQJ486EP-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ486EP-T1_GE3 Features

  • N-Channel TrenchFET power MOSFET.
  • 75V drain-source voltage rating.
  • 30A continuous drain current.
  • Low 26mOhm Rds On at 10V Vgs.
  • AEC-Q101 qualified.

SQJ486EP-T1_GE3 Applications

  • Suitable for automotive applications.
  • Power management circuits.
  • Switching power supplies.
  • High-efficiency power conversion.

SQJ486EP-T1_GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SQJ486EP-T1_GE3 MOSFET?

The drain-source voltage is 75 V.

What is the maximum continuous drain current of the SQJ486EP-T1_GE3?

The continuous drain current is 30A at 25°C.

What is the Rds On (Max) for the SQJ486EP-T1_GE3 at Vgs = 10V?

The Rds On (Max) is 26mOhm at 51A and 10V.

What is the operating temperature range for the SQJ486EP-T1_GE3?

The operating temperature range is -55°C to 175°C.

What package type is the SQJ486EP-T1_GE3 MOSFET supplied in?

The SQJ486EP-T1_GE3 is supplied in a PowerPAK SO-8 package.

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