| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19,020 pcs
|
19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The Vishay Dale SQJ481EP-T1_GE3 is an automotive-qualified P-Channel MOSFET designed for power applications. It offers a drain-source voltage (Vds) of 80V and a continuous drain current (Id) of 16A at 25°C.
This MOSFET utilizes TrenchFET technology, providing low on-resistance (RDS(on)) of 80mOhm at 10A and 10V Vgs. It operates over a wide temperature range from -55°C to 175°C and has a maximum power dissipation of 45W at 25°C.
The component is housed in a PowerPAK SO-8 surface mount package, suitable for space-constrained designs. It is AEC-Q101 qualified, ensuring reliability for automotive and industrial applications. The device is also RoHS and Halogen-free compliant.
Key electrical characteristics include an input capacitance (Ciss) of 2000pF at 25V and a gate charge (Qg) of 50nC at 10V. The threshold voltage (Vgs(th)) is 2.5V at 250µA.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating junction temperature range is -55°C to 175°C.
It comes in a PowerPAK SO-8 surface mount package (also known as PowerPAK® SO-8).
The maximum drain-to-source voltage is -80 V.
The continuous drain current at 25°C case temperature is -16 A.
The maximum Rds(on) is 80 mOhm at VGS = -10 V and 95 mOhm at VGS = -4.5 V.
The maximum gate threshold voltage is 2.5 V at 250 µA drain current.
The input capacitance (Ciss) is 2000 pF at VDS = 25 V.