| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,332 pcs
|
5332 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
2,173 pcs
|
2173 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Package / Case | |
| Power Dissipation | |
| Tape & Reel |
The Vishay SQJ479EP-T1_GE3 is a P-Channel TrenchFET® power MOSFET qualified to AEC-Q101 standards, making it suitable for demanding automotive applications. It offers a drain-source voltage (VDS) of -80V and a continuous drain current (ID) of -32A at 25°C.
Key electrical characteristics include a low on-resistance (RDS(on)) of 0.033 Ω at VGS = -10V and 0.044 Ω at VGS = -4.5V. The device operates at temperatures up to 175°C, with a maximum power dissipation of 68W at 25°C.
Packaged in a PowerPAK® SO-8L, this MOSFET is designed for surface mounting. It is lead (Pb)-free and halogen-free, aligning with modern environmental standards. The device is 100% R_g and UIS tested for reliability.
This MOSFET is ideal for power management solutions in automotive systems requiring high efficiency and robust performance under challenging thermal conditions.
The maximum drain-source voltage (VDS) for the SQJ479EP-T1_GE3 is -80 V.
The typical on-resistance (RDS(on)) at VGS = -10V for the SQJ479EP-T1_GE3 is 0.033 Ω.
The maximum continuous drain current (ID) at 25°C for the SQJ479EP-T1_GE3 is -32 A.
The operating junction and storage temperature range for the SQJ479EP-T1_GE3 is -55 to +175 °C.
The SQJ479EP-T1_GE3 is supplied in a PowerPAK SO-8L package.
Yes, the SQJ479EP-T1_GE3 is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the SQJ479EP-T1_GE3 is 1 Unlimited.