SQJ479EP-T1_GE3 The Vishay Dale SQJ479EP-T1_GE3 is an 80V P-Channel MOSFET designed for automotive applications. It features a PowerPAK SO-8 package and a continuous drain current rating of 32A.
Mfr Part #:

SQJ479EP-T1_GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQJ479EP-T1_GE3 is an 80V P-Channel MOSFET designed for automotive applications. It features a PowerPAK SO-8 package and a continuous drain current rating of 32A.
✓ Total Stock: 101,092 pcs
$ Price Range: $2.56

SQJ479EP-T1_GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SQJ479EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Number of Channels
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQJ479EP-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQJ479EP-T1_GE3 is a P-Channel Power MOSFET from the TrenchFET series, designed for automotive applications and qualified to AEC-Q101 standards. This device offers an 80V drain-source voltage and a continuous drain current of 32A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 33mOhm at 10A and 10V Vgs, and a gate-source threshold voltage of 2.5V at 250µA. The MOSFET operates within a junction temperature range of -55°C to +175°C and has a maximum power dissipation of 68W at 25°C.

 

Packaged in a PowerPAK SO-8, this surface-mount device is suitable for various power management applications. It features a low thermal resistance from junction to case of 2.2°C/W, facilitating efficient heat dissipation. The MOSFET is also 100% R_g and UIS tested for reliability.

 

This component is lead (Pb)-free and halogen-free, aligning with modern environmental standards. Its robust design and specifications make it suitable for demanding automotive and industrial power switching applications.

SQJ479EP-T1_GE3 Quick Information

Product Type: MOSFET
Series: SQ
Canonical Name: Vishay Dale SQJ479EP-T1_GE3 P-Channel 80V 32A PowerPAK SO-8 MOSFET
Subcategory: P-Channel

SQJ479EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQJ479EP-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ479EP-T1_GE3 Features

  • AEC-Q101 qualified automotive MOSFET.
  • 80V drain-source voltage rating.
  • 32A continuous drain current.
  • Low 33mOhm Rds On at 10A/10V.
  • Surface mount PowerPAK SO-8 package.

SQJ479EP-T1_GE3 Applications

  • Suitable for automotive power systems.
  • Ideal for DC-DC converters.
  • Used in power switching circuits.
  • Applicable for load management.

SQJ479EP-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SQJ479EP-T1_GE3?

80 V.

What is the continuous drain current rating?

32 A at 25°C case temperature.

What is the on-resistance (Rds(on))?

33 mOhm maximum at 10 A, 10 V gate drive.

What is the operating junction temperature range?

-55°C to 175°C.

What package does the SQJ479EP-T1_GE3 come in?

PowerPAK SO-8 surface-mount package.

What is the gate charge of this MOSFET?

150 nC typical at 10 V gate voltage.

What is the input capacitance?

4500 pF at 25 V drain-source voltage.

Home
Account

Categories