Mfr Part #:

SQJ469EP-T1_GE3

Mfr Name: Vishay

The Vishay Dale SQJ469EP-T1_GE3 is a P-Channel MOSFET with a drain-source voltage of 80V and a continuous drain current of 32A. It is housed in a PowerPAK SO-8 package.

✓ Total Stock: 8,758 pcs

$ Price Range: $2.56

SQJ469EP-T1_GE3 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	4,737 pcs On Request	4737 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,020 pcs On Request	4020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Trace Tec ✓ Non-Authorised Inventory information	1 pcs On Request	1 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SQJ469EP-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQJ469EP-T1_GE3 is a P-Channel MOSFET designed for power applications. It features a drain-source voltage (VDS) of 80V and a continuous drain current (ID) of 32A at 25°C case temperature. The MOSFET exhibits a low on-resistance (RDS(on)) of 25mOhm at 10.2A and 10V VGS, and 29mOhm at 10.2A and 6V VGS.

This device operates within a wide temperature range of -55°C to 175°C (TJ). It is constructed using MOSFET (Metal Oxide) technology and is qualified for AEC-Q101 standards. The maximum power dissipation is rated at 100W at 25°C case temperature, reducing to 33W at 125°C case temperature. The component is packaged in a Surface Mount PowerPAK SO-8 configuration.

Key electrical characteristics include an input capacitance (Ciss) of 5100 pF at 40V VDS and a gate charge (Qg) of 155 nC at 10V VGS. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA Id. The device is designed for applications requiring efficient power switching and management.

SQJ469EP-T1_GE3 Quick Information

Product Type: MOSFET

Canonical Name: Vishay Dale SQJ469EP-T1_GE3 P-Channel 80V 32A PowerPAK SO-8 MOSFET

Subcategory: P-Channel

SQJ469EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SQJ469EP-T1_GE3 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ469EP-T1_GE3 Features

P-Channel MOSFET with 80V drain-source voltage.
Continuous drain current of 32A at 25°C.
Low on-resistance of 25mOhm at 10V.
Operates from -55°C to 175°C.
Surface mount PowerPAK SO-8 package.

SQJ469EP-T1_GE3 Applications

Suitable for high-power switching applications.
Ideal for power management circuits.
Used in automotive applications.
Efficient for DC-DC converters.

SQJ469EP-T1_GE3 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage of the SQJ469EP-T1_GE3?

The drain-source voltage (VDS) is 80V.

What is the continuous drain current for the SQJ469EP-T1_GE3?

The continuous drain current is 32A at 25°C case temperature.

What is the operating temperature range of this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What is the package type for the SQJ469EP-T1_GE3?

The package type is PowerPAK SO-8.

What is the Rds On value at Vgs = -10V?

The Rds On is 25mOhm at 10.2A and 10V.

What is the Gate Charge (Qg) for this device?

The Gate Charge (Qg) is a maximum of 155 nC at 10V Vgs.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	32A (Tc)
Drain to Source Voltage (Vdss)	-80 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5100 pF @ 40 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	100W (Tc)
Rds On (Max) @ Id, Vgs	25mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA