| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,774 pcs
|
2774 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SQJ464EP-T1_GE3 is an N-Channel MOSFET from Vishay Dale. It is designed for power switching applications.
The device features a drain-source breakdown voltage of 60V and a continuous drain current rating of 32A. The MOSFET is housed in a PPAK SO-8 surface mount package, suitable for compact power management circuits.
Typical applications include DC-DC converters, load switches, and motor control. The part offers efficient switching performance for low to medium voltage power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) rating is 60V.
The continuous drain current (Id) is 32A.
It comes in a PPAK SO-8 package.
It is an N-channel MOSFET.