DistyParts Icon
SQJ463EP-T1_GE3 The Vishay Dale SQJ463EP-T1_GE3 is a P-Channel MOSFET with a 40V drain-source voltage and a continuous drain current of 30A. It features a low on-resistance of 10mOhm at 18A, 10V and is housed in a PowerPAK SO-8 package.
Mfr Part #:

SQJ463EP-T1_GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQJ463EP-T1_GE3 is a P-Channel MOSFET with a 40V drain-source voltage and a continuous drain current of 30A. It features a low on-resistance of 10mOhm at 18A, 10V and is housed in a PowerPAK SO-8 package.
✓ Total Stock: 18,021 pcs
$ Price Range: $2.56

SQJ463EP-T1_GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
15,374 pcs
On Request
15374 pcs On Request 1 On Request On Request 1948+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,790 pcs
On Request
1790 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
857 pcs
On Request
857 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SQJ463EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

SQJ463EP-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQJ463EP-T1_GE3 is a P-Channel MOSFET designed for automotive applications, indicated by its AEC-Q101 qualification. It offers a drain-source voltage (Vds) of 40V and can handle a continuous drain current (Id) of 30A at 25°C. The MOSFET exhibits a low on-resistance (Rds(on)) of 10mOhm when tested at 18A and 10V gate-source voltage, making it efficient for power switching applications.

 

This device operates within a wide temperature range of -55°C to 175°C (TJ). It is packaged in a PowerPAK SO-8 surface-mount package, suitable for compact designs. The MOSFET technology utilizes a TrenchFET® design for enhanced performance. Key electrical parameters include a gate threshold voltage of 2.5V at 250µA and an input capacitance of 5875 pF at 20V.

SQJ463EP-T1_GE3 Quick Information

Product Type: MOSFET
Series: Automotive, AEC-Q101
Canonical Name: P-Channel 40V 30A PowerPAK SO-8 MOSFET
Subcategory: P-Channel

SQJ463EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQJ463EP-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ463EP-T1_GE3 Features

  • P-Channel MOSFET with 40V drain-source voltage.
  • Continuous drain current rated at 30A.
  • Low on-resistance of 10mOhm at 18A, 10V.
  • AEC-Q101 qualified for automotive use.
  • Surface mount PowerPAK SO-8 package.

SQJ463EP-T1_GE3 Applications

  • Suitable for automotive power systems.
  • Efficient for high-current switching.
  • Used in power management circuits.
  • Ideal for compact electronic designs.

SQJ463EP-T1_GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SQJ463EP-T1_GE3?

The drain-source voltage (Vds) for the SQJ463EP-T1_GE3 is 40V.

What is the continuous drain current for this MOSFET?

The continuous drain current (Id) for the SQJ463EP-T1_GE3 is 30A at 25°C.

What is the on-resistance of the SQJ463EP-T1_GE3?

The on-resistance (Rds(on)) is a maximum of 10mOhm at 18A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the SQJ463EP-T1_GE3 supplied in?

This MOSFET is supplied in a PowerPAK SO-8 package.

Is the SQJ463EP-T1_GE3 RoHS compliant?

Yes, the SQJ463EP-T1_GE3 is RoHS3 compliant.

Home
Account

Categories