| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
493 pcs
|
493 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQJ460AEP-T1_GE3 is an automotive-qualified N-Channel Power MOSFET designed for high-performance applications. It offers a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 32A at 25°C.
This MOSFET boasts a low on-resistance (Rds(on)) of 9.6mOhm at a gate-source voltage (Vgs) of 10V, and 12.0mOhm at 4.5V Vgs. It is built using TrenchFET technology and is 100% Rg and UIS tested, ensuring reliability and performance.
The device operates over a wide temperature range from -55°C to 175°C (TJ) and has a maximum power dissipation of 83W at 25°C. It is housed in a PowerPAK SO-8 package, suitable for surface mounting.
Key electrical characteristics include a gate charge (Qg) of 106 nC at 10V and an input capacitance (Ciss) of 4795 pF at 25V. The gate-source voltage maximum is ±20V, and the gate threshold voltage (Vgs(th)) is 2.5V at 250µA.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 60V.
The on-resistance (Rds(on)) is 9.6mOhm at 18A and 10V gate-source voltage.
The continuous drain current (Id) is 32A at 25°C and 32A at 125°C.
The operating junction and storage temperature range is -55°C to 175°C.
It is supplied in a PowerPAK SO-8 package.