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SQJ459EP-T1_GE3 The Vishay Dale SQJ459EP-T1_GE3 is a P-Channel MOSFET with a 60V drain-source voltage rating. It features a low RDS(on) of 0.018 Ohm at 10V gate drive.
Mfr Part #:

SQJ459EP-T1_GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQJ459EP-T1_GE3 is a P-Channel MOSFET with a 60V drain-source voltage rating. It features a low RDS(on) of 0.018 Ohm at 10V gate drive.
✓ Total Stock: 96,279 pcs
$ Price Range: $2.56

SQJ459EP-T1_GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
52,020 pcs
On Request
52020 pcs On Request 1 On Request On Request On Request On Request On Request
Risen Electronics ✓
Non-Authorised Inventory information
42,000 pcs
On Request
42000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Xingangxin ✓
Non-Authorised Inventory information
1,259 pcs
On Request
1259 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SQJ459EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SQJ459EP-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQJ459EP-T1_GE3 is a P-Channel power MOSFET designed for automotive applications. It offers a 60V drain-source voltage and a continuous drain current of 52A at 25°C.

 

Key electrical characteristics include a low on-resistance (RDS(on)) of 0.018 Ohm at VGS = -10V and 0.024 Ohm at VGS = -4.5V. The MOSFET has a gate-source voltage range of ±20V and a gate threshold voltage of 2.5V at 250µA.

 

Packaged in a PowerPAK SO-8, this surface-mount device is suitable for applications requiring efficient power handling. It operates within a junction and storage temperature range of -55°C to +175°C and has a maximum power dissipation of 83W at 25°C.

 

The SQJ459EP-T1_GE3 is AEC-Q101 qualified and meets lead-free and halogen-free standards, making it a reliable choice for demanding environments.

SQJ459EP-T1_GE3 Quick Information

Product Type: MOSFET
Series: SQJ459EP
Canonical Name: Vishay Dale SQJ459EP-T1_GE3 P-Channel 60V PowerPAK SO-8 MOSFET
Subcategory: P-Channel

SQJ459EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SQJ459EP-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ459EP-T1_GE3 Features

  • P-Channel 60V Power MOSFET.
  • Low RDS(on) of 0.018 Ohm at 10V.
  • High continuous drain current of 52A.
  • AEC-Q101 qualified for automotive use.
  • PowerPAK SO-8 surface mount package.

SQJ459EP-T1_GE3 Applications

  • Ideal for automotive power management.
  • Suitable for DC-DC converters.
  • Used in load switch applications.
  • Efficient power switching circuits.

SQJ459EP-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the SQJ459EP-T1_GE3?

The drain-source voltage rating for the SQJ459EP-T1_GE3 is 60V.

What is the continuous drain current of the SQJ459EP-T1_GE3 at 25°C?

The continuous drain current at 25°C for the SQJ459EP-T1_GE3 is 52A.

What is the on-resistance (RDS(on)) of the SQJ459EP-T1_GE3 at VGS = -10V?

The RDS(on) at VGS = -10V for the SQJ459EP-T1_GE3 is 0.018 Ohm.

What is the operating temperature range for the SQJ459EP-T1_GE3?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the SQJ459EP-T1_GE3 MOSFET supplied in?

The SQJ459EP-T1_GE3 is supplied in a PowerPAK SO-8 package.

Is the SQJ459EP-T1_GE3 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SQJ459EP-T1_GE3?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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