| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,020 pcs
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4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SQJ459EP-T1_BE3 is a P-Channel TrenchFET® power MOSFET with a drain-source voltage rating of 60V. It is AEC-Q101 qualified and operates at temperatures up to 175°C.
Key electrical characteristics include a maximum continuous drain current of 52A at 25°C (30A at 125°C) and a low on-resistance of 0.018 Ohm at 10V Vgs. The device features a gate-source voltage range of ±20V and a gate charge of 108 nC.
Packaged in a PowerPAK® SO-8 surface mount package, this MOSFET is suitable for various power management applications. Its thermal performance is supported by a junction-to-case thermal resistance of 1.8 °C/W and a maximum power dissipation of 83W at 25°C.
This component is lead (Pb)-free and halogen-free, adhering to modern environmental standards. It is tested for Rg and UIS, ensuring reliability in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 60V.
The maximum continuous drain current is 52A at 25°C and 30A at 125°C.
The operating junction and storage temperature range is -55°C to +175°C.
The component is in a PowerPAK® SO-8 package.
The on-resistance is a maximum of 0.018 Ohm at 3.5A and 10V Vgs.
Yes, the SQJ459EP-T1_BE3 is AEC-Q101 qualified.