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SQJ457EP-T1_GE3 P-Channel MOSFET with -60V drain-source voltage, 36A continuous drain current, and 25mOhm on-resistance. Housed in a PPAK SO-8 package.
Mfr Part #:

SQJ457EP-T1_GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
P-Channel MOSFET with -60V drain-source voltage, 36A continuous drain current, and 25mOhm on-resistance. Housed in a PPAK SO-8 package.
✓ Total Stock: 8,429 pcs
$ Price Range: $2.56

SQJ457EP-T1_GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
7,020 pcs
On Request
7020 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,389 pcs
On Request
1389 pcs On Request 1 On Request On Request On Request On Request On Request
MW.FEP S.p.A. ✓
Non-Authorised Inventory information
20 pcs
On Request
20 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SQJ457EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SQJ457EP-T1_GE3 Description

Short technical summary and product information.

The SQJ457EP-T1_GE3 is a P-Channel enhancement-mode MOSFET from Vishay Dale designed for medium-power switching applications. It features a maximum drain-to-source voltage of -60V and a continuous drain current rating of 36A, making it suitable for load switching and power management circuits.

 

Key electrical characteristics include a typical gate threshold voltage of 2.5V at 250µA and a maximum on-resistance of 25mOhm at 10A gate drive of 10V. The device is housed in a PPAK SO-8 surface-mount package, which offers a compact footprint for space-constrained designs.

 

This MOSFET is intended for use in applications such as DC-DC converters, power supply OR-ing, and battery protection circuits where P-Channel topology simplifies drive circuitry.

SQJ457EP-T1_GE3 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: SQJ457EP-T1_GE3 P-Channel MOSFET
Subcategory: Single MOSFET

SQJ457EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQJ457EP-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ457EP-T1_GE3 Features

  • P-Channel MOSFET with -60V drain-source voltage.
  • 36A continuous drain current rating.
  • 25mOhm maximum on-resistance at 10A/10V.
  • 2.5V typical gate threshold voltage.
  • PPAK SO-8 surface-mount package.

SQJ457EP-T1_GE3 Applications

  • High-side load switching in power supplies.
  • Battery protection and management circuits.
  • DC-DC converter and power OR-ing.
  • Automotive and industrial power switching.

SQJ457EP-T1_GE3 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SQJ457EP-T1_GE3?

The maximum drain-to-source voltage (Vdss) is -60V.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds(on)) is 25mOhm at Vgs=10V and Id=10A.

What is the gate threshold voltage of the SQJ457EP-T1_GE3?

The typical gate threshold voltage (Vgs(th)) is 2.5V at 250µA.

What is the maximum gate-to-source voltage rating?

The maximum gate-to-source voltage (Vgs) is ±20V.

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