| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,698 pcs
|
2698 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The SQJ457EP-T1_BE3 is a P-Channel enhancement mode MOSFET designed for high efficiency power management applications. It offers a maximum drain-to-source voltage of -60V and a continuous drain current of -36A at 25°C case temperature. The device features a low on-resistance of 25mOhm (max) at VGS = -10V and 35mOhm at VGS = -4.5V, enabling low conduction losses. The gate threshold voltage is 2.5V max at 250µA drain current. The MOSFET is capable of handling up to 68W power dissipation at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C. It is housed in a PowerPAK SO-8L surface mount package, which provides excellent thermal performance with a junction-to-case thermal resistance of 2.2°C/W. The device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). Typical applications include load switching, power management in portable electronics, and DC-DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60V.
PowerPAK SO-8L surface mount package.
-55°C to 175°C.
-36A at 25°C case temperature.
25mOhm maximum at VGS=-10V.
68W at 25°C case temperature.
100nC maximum at VGS=10V.