SQJ454EP-T1_GE3 The Vishay SQJ454EP-T1_GE3 is an N-Channel MOSFET designed for demanding applications. It offers a 200V drain-source voltage and 13A continuous current capability.
Mfr Part #:

SQJ454EP-T1_GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay SQJ454EP-T1_GE3 is an N-Channel MOSFET designed for demanding applications. It offers a 200V drain-source voltage and 13A continuous current capability.
✓ Total Stock: 28,408 pcs
$ Price Range: $2.56

SQJ454EP-T1_GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
19,020 pcs
19020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
9,388 pcs
9388 pcs On Request 1 On Request On Request On Request On Request On Request

SQJ454EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQJ454EP-T1_GE3 Description

Short technical summary and product information.

The Vishay SQJ454EP-T1_GE3 is an N-Channel Power MOSFET featuring TrenchFET technology and AEC-Q101 qualification. It is designed for high-performance applications requiring robust power handling.

 

This MOSFET boasts a 200V drain-source voltage and a continuous drain current of 13A at 25°C case temperature, with a reduced current rating of 7.5A at 125°C. Its on-resistance is specified as a maximum of 145mOhm at 7.5A and 10V gate-source voltage, and 150mOhm at 4.5V gate-source voltage. The device also features a low input capacitance of 2600pF and a gate charge of 85nC.

 

With a maximum power dissipation of 68W at 25°C case temperature, the SQJ454EP-T1_GE3 is suitable for power-intensive designs. It operates across a wide temperature range from -55°C to +175°C.

 

The component is housed in a PowerPAK SO-8 package, a surface-mount type designed for efficient thermal management. The exposed copper tip on the lead terminal is a result of the manufacturing process and does not require a solder fillet for adequate bottom side solder interconnection.

SQJ454EP-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay SQJ454EP-T1_GE3 N-Channel 200V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SQJ454EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQJ454EP-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ454EP-T1_GE3 Features

  • AEC-Q101 qualified N-Channel MOSFET.
  • 200V drain-source voltage rating.
  • 13A continuous drain current.
  • Low on-resistance: 145mOhm max.
  • PowerPAK SO-8 surface-mount package.

SQJ454EP-T1_GE3 Applications

  • Suitable for DC-DC converter circuits.
  • Used in power management systems.
  • Ideal for motor control applications.
  • Applicable in load switching designs.

SQJ454EP-T1_GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SQJ454EP-T1_GE3?

The maximum drain-source voltage is 200V.

What is the continuous drain current of the SQJ454EP-T1_GE3 at 25°C?

The continuous drain current is 13A at 25°C case temperature.

What is the maximum on-resistance of the SQJ454EP-T1_GE3?

The maximum on-resistance is 145mOhm at 7.5A and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the SQJ454EP-T1_GE3 MOSFET supplied in?

The SQJ454EP-T1_GE3 is supplied in a PowerPAK SO-8 package.

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