| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
52,020 pcs
|
52020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,910 pcs
|
1910 pcs | On Request | 1 | On Request | On Request | 1825+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQJ443EP-T1_GE3 is a P-Channel MOSFET belonging to the TrenchFET® power MOSFET family. It is designed for demanding applications requiring robust performance, featuring a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 40A at 25°C.
Key electrical characteristics include a low on-resistance (Rds On) of 0.029 Ohms at Vgs = -10V, and 0.047 Ohms at Vgs = -4.5V. The device also has a gate charge (Qg) of 57 nC and an input capacitance (Ciss) of 2030 pF.
This MOSFET operates within a wide temperature range of -55°C to 175°C. It is housed in a PowerPAK® SO-8 package, suitable for surface mount applications. The thermal resistance from junction to case is 1.8 °C/W, and junction to ambient is 65 °C/W when mounted on a PCB.
The SQJ443EP-T1_GE3 is AEC-Q101 qualified, indicating its suitability for automotive applications. It is also 100% Rg and UIS tested, ensuring reliability and performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40V maximum.
PowerPAK SO-8.
-55°C to 175°C.
-40A at 25°C case temperature.
29mOhm maximum at VGS=-10V.
2.5V maximum at Id=250µA.
83W at 25°C case temperature.