SQJ431EP-T1_GE3 The Vishay SQJ431EP-T1_GE3 is a P-Channel MOSFET with a 200V drain-source voltage and 12A continuous drain current. It is housed in a surface-mount PowerPAK SO-8 package.
Mfr Part #:

SQJ431EP-T1_GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay SQJ431EP-T1_GE3 is a P-Channel MOSFET with a 200V drain-source voltage and 12A continuous drain current. It is housed in a surface-mount PowerPAK SO-8 package.
✓ Total Stock: 7,334 pcs
$ Price Range: $2.56

SQJ431EP-T1_GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,314 pcs
3314 pcs On Request 1 On Request On Request On Request On Request On Request

SQJ431EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQJ431EP-T1_GE3 Description

Short technical summary and product information.

The Vishay SQJ431EP-T1_GE3 is an automotive-qualified P-Channel Power MOSFET designed for high-performance applications. It features a maximum drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 12A at 25°C.

 

This MOSFET offers a low on-resistance (Rds On) of 213mΩ at 1A and 4V gate-source voltage, contributing to efficient power handling with a maximum power dissipation of 83W at 25°C. It operates within a wide temperature range of -55°C to 175°C.

 

The device is built using TrenchFET® technology and comes in a PowerPAK® SO-8 single package, suitable for surface mounting. It meets RoHS 3 compliance and is halogen-free, making it suitable for various automotive and industrial applications requiring reliable power switching.

 

Key electrical parameters include a gate charge (Qg) of 160nC at 10V and a gate-source voltage (Vgs) limit of ±20V. The MOSFET is also 100% Rg and UIS tested, ensuring robust performance.

SQJ431EP-T1_GE3 Quick Information

Product Type: MOSFET
Series: SQ
Canonical Name: Vishay SQJ431EP-T1_GE3 P-Channel MOSFET
Subcategory: P-Channel

SQJ431EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQJ431EP-T1_GE3 Estimated Pricing

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1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ431EP-T1_GE3 Features

  • 200V drain-source voltage rating.
  • 12A continuous drain current.
  • 83W maximum power dissipation.
  • AEC-Q101 qualified for automotive use.
  • Surface mount PowerPAK SO-8 package.

SQJ431EP-T1_GE3 Applications

  • Suitable for automotive power systems.
  • Ideal for efficient power switching.
  • Used in high-reliability applications.
  • Designed for compact power designs.

SQJ431EP-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SQJ431EP-T1_GE3?

200V maximum.

What is the continuous drain current rating?

12A at 25°C case temperature.

What package does the SQJ431EP-T1_GE3 come in?

PowerPAK SO-8 surface mount package.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What is the on-resistance of this MOSFET?

213 mOhm at 1A and 4V gate drive.

Is the SQJ431EP-T1_GE3 automotive qualified?

Yes, it is AEC-Q101 qualified.

Is the device halogen-free?

Yes, according to IEC 61249-2-21 definition.

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