SQJ431AEP-T1_GE3 P-Channel MOSFET with 200V drain-to-source voltage and 9.4A continuous drain current. Housed in a PowerPAK SO-8 surface-mount package.
Mfr Part #:

SQJ431AEP-T1_GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
P-Channel MOSFET with 200V drain-to-source voltage and 9.4A continuous drain current. Housed in a PowerPAK SO-8 surface-mount package.
✓ Total Stock: 36,010 pcs
$ Price Range: $2.56

SQJ431AEP-T1_GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SQJ431AEP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQJ431AEP-T1_GE3 Description

Short technical summary and product information.

The SQJ431AEP-T1_GE3 is a P-channel MOSFET designed and manufactured by Vishay Dale. It features a drain-to-source voltage (Vdss) of -200V and a continuous drain current of -9.4A at 25°C. The device offers a maximum on-resistance of 305 mOhm at 10V gate drive, ensuring efficient power handling. With a gate charge of 85 nC at 10V and input capacitance of 3700 pF at 25V, it is well-suited for high-frequency switching applications.

 

The MOSFET is rated for a maximum power dissipation of 68W at 25°C case temperature, and operates over a junction temperature range of -55°C to +175°C. It is packaged in the industry-standard PowerPAK SO-8, which provides excellent thermal performance and low profile for surface-mount assembly. The device is lead-free and halogen-free, meeting environmental requirements.

 

Common applications include high-voltage DC-DC converters, power management in automotive systems, load switching, and motor control circuits. The robust avalanche capability (single pulse avalanche energy 45 mJ) adds reliability in inductive switching environments.

SQJ431AEP-T1_GE3 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: Vishay Dale SQJ431AEP-T1_GE3 P-Channel MOSFET
Subcategory: P-Channel MOSFET

SQJ431AEP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SQJ431AEP-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ431AEP-T1_GE3 Features

  • P-channel MOSFET with 200V drain-source voltage.
  • Continuous drain current rating of 9.4A at 25°C.
  • Low on-resistance of 305 milliohms at 10V gate drive.
  • High power dissipation of 68W at 25°C case temperature.
  • Surface-mount PowerPAK SO-8 package.

SQJ431AEP-T1_GE3 Applications

  • Used in high-voltage DC-DC converter circuits.
  • Ideal for load switching in automotive electronics.
  • Suitable for motor control and power management.
  • Common in battery management and protection systems.

SQJ431AEP-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the SQJ431AEP-T1_GE3?

The drain-to-source voltage (Vdss) is -200 V.

What is the continuous drain current rating?

The continuous drain current is -9.4 A at 25°C and -5.4 A at 125°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 305 mOhm at 3.8A, 10V and 315 mOhm at 3.8A, 6V.

What is the package type of the SQJ431AEP-T1_GE3?

The package is PowerPAK SO-8, surface mount.

What is the operating junction temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 3.5 V at 250 µA.

What is the maximum power dissipation?

Maximum power dissipation is 68 W at 25°C case temperature and 22 W at 125°C.

Home
Account

Categories