| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,950 pcs
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2950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Vishay Dale SQJ418EP-T1_GE3 is an N-Channel power MOSFET designed for demanding applications. It features a high drain-source voltage rating of 100V and a continuous drain current capability of 48A at 25°C case temperature. The MOSFET exhibits a low maximum on-resistance of 14mOhm at 10A and 10V gate-source voltage, contributing to efficient power delivery.
With a maximum power dissipation of 68W at 25°C case temperature, this device is suitable for various power management tasks. It operates within a wide temperature range of -55°C to 175°C (TJ). The component is housed in a surface-mount PowerPAK SO-8 package, facilitating integration into compact electronic designs.
Key electrical characteristics include a gate-source voltage range of ±20V and a gate threshold voltage of 3.5V at 250µA. The input capacitance is rated at 1700pF at 25V, and the gate charge is a maximum of 35nC at 10V. The MOSFET utilizes Metal Oxide technology and is qualified for AEC-Q101 standards, indicating its suitability for automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
PowerPAK SO-8.
-55°C to 175°C.
48A at 25°C case temperature.
14mOhm at Vgs=10V, Id=10A.
35nC at Vgs=10V.