| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,480 pcs
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3480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The Vishay Dale SQJ415EP-T1_GE3 is a P-Channel MOSFET designed for demanding applications. It features a maximum drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 30A at 25°C.
This MOSFET offers a low on-resistance (Rds On) of 0.014 Ohms at 10A and 10V, and 0.02 Ohms at 10A and 4.5V. It operates within a wide temperature range of -55°C to 175°C.
The device is packaged in a PowerPAK SO-8 surface mount package, suitable for various electronic designs. Key electrical characteristics include an input capacitance of 6000 pF and a gate charge of 95 nC.
With its robust specifications, the SQJ415EP-T1_GE3 is suitable for power management and switching applications where high performance and reliability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -40V.
It utilizes a PowerPAK SO-8 surface mount package.
The operating junction and storage temperature range spans from -55°C to +175°C.
The maximum on-resistance is 0.014 ohms when tested at 10A drain current and 10V gate-source voltage.
It supports a continuous drain current of 30A at a case temperature of 25°C.
The single pulse avalanche energy rating is 31.2 millijoules when tested with a 0.1 millihenry inductor.