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SQJ412EP-T1 The Vishay Dale SQJ412EP-T1 is an N-MOSFET transistor featuring a 40V drain-source voltage and 32A drain current. It is supplied in a PowerPAK SO8 SMD package.
Mfr Part #:

SQJ412EP-T1

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQJ412EP-T1 is an N-MOSFET transistor featuring a 40V drain-source voltage and 32A drain current. It is supplied in a PowerPAK SO8 SMD package.
✓ Total Stock: 2,655 pcs
$ Price Range: $0.99

SQJ412EP-T1 Available from 1 distributor

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2,655 pcs
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SQJ412EP-T1 Specifications Quick View

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SQJ412EP-T1 Description

Short technical summary and product information.

The Vishay Dale SQJ412EP-T1 is an N-channel MOSFET transistor designed for various electronic applications. It offers a drain-source voltage of 40V and a continuous drain current of 32A, with a power dissipation rating of 83W.

 

This unipolar transistor utilizes an enhancement mode channel and has a gate-source voltage tolerance of ±20V. The on-state resistance is specified at 4.1mΩ, and the gate charge is 80nC.

 

Packaged in a PowerPAK SO8 case, the SQJ412EP-T1 is designed for surface-mount (SMD) applications. It is supplied on tape and reel, suitable for automated assembly processes.

SQJ412EP-T1 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: Vishay Dale SQJ412EP-T1 N-Channel MOSFET
Subcategory: N-MOSFET

SQJ412EP-T1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQJ412EP-T1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ412EP-T1 Features

  • 40V drain-source voltage rating.
  • 32A continuous drain current capability.
  • 83W maximum power dissipation.
  • 4.1mΩ typical on-state resistance.
  • PowerPAK SO8 SMD package.

SQJ412EP-T1 Applications

  • Suitable for high-current switching applications.
  • Ideal for power management in SMD circuits.
  • Used in motor control and power supply circuits.
  • Applicable in electronic load switching and protection.
  • Suitable for compact, surface-mount power modules.

SQJ412EP-T1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SQJ412EP-T1?

The drain-source voltage is 40V.

What is the continuous drain current for the SQJ412EP-T1?

The continuous drain current is 32A.

What is the power dissipation of the SQJ412EP-T1?

The power dissipation is 83W.

What is the on-state resistance of the SQJ412EP-T1?

The on-state resistance is 4.1mΩ.

What type of transistor is the SQJ412EP-T1?

The SQJ412EP-T1 is an N-MOSFET transistor with an enhancement mode channel.

What package is the SQJ412EP-T1 supplied in?

The SQJ412EP-T1 is supplied in a PowerPAK SO8 SMD package on tape and reel.

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