| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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16,020 pcs
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16020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQJ403BEEP-T1_GE3 is a P-Channel TrenchFET® power MOSFET designed for demanding applications. It offers a 30V drain-source voltage and a continuous drain current of 30A at 25°C. The MOSFET exhibits a low on-resistance of 8.5mOhm at 10A and 10V Vgs, and 0.0200 Ohm at 10A and 4.5V Vgs. It is qualified to AEC-Q101 standards and includes 3000V ESD protection.
This component is housed in a PowerPAK® SO-8 package, suitable for surface mounting. The operating junction and storage temperature range is from -55°C to +175°C. With a maximum power dissipation of 68W at 25°C, it is designed for efficient power handling. The device is lead (Pb)-free and halogen-free, meeting modern environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 30 V.
The maximum continuous drain current is 30 A at 25°C.
The on-resistance is 8.5 mOhm at 10A and 10V.
The operating junction and storage temperature range is -55°C to +175°C.
It is in a PowerPAK® SO-8 package.
Yes, the SQJ403BEEP-T1_GE3 MOSFET is AEC-Q101 qualified.