SQJ402EP-T1_GE3 The Vishay SQJ402EP-T1_GE3 is an N-Channel Power MOSFET designed for demanding applications. It offers a 100V drain-source voltage and a continuous drain current of 32A.
Mfr Part #:

SQJ402EP-T1_GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay SQJ402EP-T1_GE3 is an N-Channel Power MOSFET designed for demanding applications. It offers a 100V drain-source voltage and a continuous drain current of 32A.
✓ Total Stock: 170 pcs
$ Price Range: $2.56

SQJ402EP-T1_GE3 Available from 2 distributors

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✓ Non-Authorised
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91 pcs
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Non-Authorised Inventory information
79 pcs
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SQJ402EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQJ402EP-T1_GE3 Description

Short technical summary and product information.

The Vishay SQJ402EP-T1_GE3 is an automotive-qualified N-Channel Power MOSFET featuring TrenchFET technology. It is designed for high-performance applications requiring robust power handling capabilities.

 

This MOSFET boasts a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 32A at 25°C. The on-resistance (Rds(on)) is as low as 0.0110 Ohms at 10A and 10V gate-source voltage, ensuring efficient power transfer with minimal losses. It operates within a wide temperature range of -55°C to +175°C.

 

The device is housed in a compact PowerPAK SO-8L package, suitable for surface mounting. Its thermal resistance from junction-to-case is 1.8°C/W, allowing for effective heat dissipation. The MOSFET is AEC-Q101 qualified, indicating its suitability for automotive environments.

 

Key electrical characteristics include a gate charge (Qg) of 51 nC at 10V and an input capacitance (Ciss) of 2289 pF at 40V. The maximum power dissipation is rated at 83W at 25°C case temperature.

SQJ402EP-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQJ402EP-T1_GE3 N-Channel 100V 32A PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SQJ402EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SQJ402EP-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ402EP-T1_GE3 Features

  • Automotive AEC-Q101 qualified MOSFET.
  • 100V drain-source voltage rating.
  • 32A continuous drain current capability.
  • Low 0.0110 Ohm Rds(on) at 10Vgs.
  • Compact PowerPAK SO-8L package.

SQJ402EP-T1_GE3 Applications

  • Power supply switching circuits.
  • DC-DC converter applications.
  • Motor control and drive circuits.
  • Battery protection and management.
  • High-frequency switching power converters.

SQJ402EP-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

100V.

What is the continuous drain current rating?

32A at Tc = 25°C.

What is the on-resistance?

11mOhm at Vgs = 10V, 14mOhm at Vgs = 4.5V.

What is the operating temperature range?

-55°C to +175°C.

What is the package type?

PowerPAK SO-8.

What is the gate threshold voltage?

2.5V at 250µA.

What is the maximum power dissipation?

83W at Tc = 25°C.

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