SQJ182EP-T1_GE3 The Vishay Dale SQJ182EP-T1_GE3 is an automotive-grade N-channel MOSFET. It offers a high continuous drain current of 210A and a low on-resistance of 5mOhm at 15A, 10V.
Mfr Part #:

SQJ182EP-T1_GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQJ182EP-T1_GE3 is an automotive-grade N-channel MOSFET. It offers a high continuous drain current of 210A and a low on-resistance of 5mOhm at 15A, 10V.
✓ Total Stock: 9,000 pcs
$ Price Range: $2.56

SQJ182EP-T1_GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,000 pcs
9000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16

SQJ182EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQJ182EP-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQJ182EP-T1_GE3 is a high-performance N-channel MOSFET designed for automotive applications. It features a maximum drain-to-source voltage (Vdss) of 80V and a significant continuous drain current (Id) rating of 210A at case temperature.

 

This MOSFET boasts a low on-resistance (Rds On) of 5mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 15A, ensuring efficient power transfer. Key electrical parameters include an input capacitance (Ciss) of 5392 pF at 25V and a gate charge (Qg) of 96 nC at 10V. The gate-source voltage (Vgs) is rated up to ±20V, with a threshold voltage (Vgs(th)) of 3.5V at 250µA.

 

Operating within a wide temperature range of -55°C to 175°C (TJ), the SQJ182EP-T1_GE3 is suitable for demanding thermal environments. It has a maximum power dissipation of 395W (Tc). The component is housed in a surface-mount PowerPAK® SO-8 package, facilitating integration into compact PCB designs.

 

Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted as low-confidence from the source database.

SQJ182EP-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQJ182EP-T1_GE3 N-Channel MOSFET
Subcategory: Single

SQJ182EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQJ182EP-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ182EP-T1_GE3 Features

  • 80V drain-to-source voltage rating.
  • 210A continuous drain current.
  • 5mOhm maximum on-resistance.
  • Surface mount PowerPAK SO-8 package.
  • Wide -55°C to 175°C operating temperature.

SQJ182EP-T1_GE3 Applications

  • Suitable for automotive power systems.
  • Efficient for high current switching.
  • Ideal for power management circuits.
  • Used in demanding thermal environments.

SQJ182EP-T1_GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SQJ182EP-T1_GE3?

The drain-to-source voltage (Vdss) is 80 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 210A.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 5mOhm at 15A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the SQJ182EP-T1_GE3 in?

It is supplied in the PowerPAK® SO-8 package.

How is this MOSFET mounted?

It is designed for surface mount.

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