SQJ180EP-T1_GE3 The Vishay Dale SQJ180EP-T1_GE3 is an automotive-grade N-Channel MOSFET with 80V drain-source voltage. It offers a continuous drain current of 248A and a low on-resistance of 3mOhm.
Mfr Part #:

SQJ180EP-T1_GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQJ180EP-T1_GE3 is an automotive-grade N-Channel MOSFET with 80V drain-source voltage. It offers a continuous drain current of 248A and a low on-resistance of 3mOhm.
✓ Total Stock: 34,020 pcs
$ Price Range: $2.56

SQJ180EP-T1_GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
25,020 pcs
25020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
9,000 pcs
9000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16

SQJ180EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQJ180EP-T1_GE3 Description

Short technical summary and product information.

This Vishay Dale SQJ180EP-T1_GE3 is an N-Channel MOSFET designed for automotive applications, featuring a TrenchFET Gen IV power MOSFET construction. It operates with a drain-source voltage of 80V and a gate-source voltage of ±20V. The device boasts a continuous drain current of 248A at 25°C and a maximum power dissipation of 500W at 25°C.

 

Key electrical characteristics include a low on-resistance of 3mOhm at 15A and 10V, and an input capacitance of 6645pF at 25V. The gate charge is 117nC at 10V. The MOSFET is qualified to AEC-Q101 standards and is tested 100% for R_g and UIS.

 

The device is housed in a PowerPAK SO-8 package, suitable for surface mounting. It operates within a temperature range of -55°C to 175°C (TJ). Thermal resistance from junction to case is 0.3°C/W, and junction-to-ambient is 42°C/W when mounted on a 1" square PCB (FR4 material).

 

Material categorization is available for compliance definitions. The product summary includes VDS of 80V, RDS(on) of 0.0030Ω at VGS = 10V, ID of 248A, and a single configuration. It is AEC-Q101 qualified.

SQJ180EP-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQJ180EP-T1_GE3 N-Channel 80V PowerPAK SO-8 MOSFET
Subcategory: PowerPAK SO-8

SQJ180EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQJ180EP-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ180EP-T1_GE3 Features

  • Automotive N-Channel 80V MOSFET
  • TrenchFET Gen IV power MOSFET
  • AEC-Q101 qualified
  • Low 3mOhm Rds On
  • PowerPAK SO-8 package

SQJ180EP-T1_GE3 Applications

  • Ideal for automotive power systems
  • Suitable for high current switching
  • Efficient power conversion designs
  • Robust thermal management needs

SQJ180EP-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SQJ180EP-T1_GE3?

The drain-source breakdown voltage is 80V.

What is the continuous drain current rating?

The continuous drain current is 248A at 25°C case temperature and 143A at 125°C case temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 3mOhm at a drain current of 15A and gate-source voltage of 10V.

What package is the SQJ180EP-T1_GE3 available in?

It is available in a surface-mount PowerPAK SO-8 package.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What is the maximum power dissipation?

The maximum power dissipation is 500W at 25°C case temperature and 166W at 125°C case temperature.

What is the gate charge of this device?

The maximum gate charge is 117nC at a gate-source voltage of 10V.

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