| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQJ147ELP-T1_GE3 is a P-Channel MOSFET featuring TrenchFET® power MOSFET technology. It is rated for a drain-source voltage of 40V and a continuous drain current of up to 90A at 25°C case temperature. The MOSFET exhibits a low on-resistance of 12.5mOhm at 10A and 10V gate-source voltage.
This device operates within a junction and storage temperature range of -55°C to +175°C. It is housed in a PowerPAK® SO-8L package, suitable for surface mount applications. The MOSFET is AEC-Q101 qualified and 100% R_g and UIS tested, indicating its suitability for automotive and high-reliability applications.
Key electrical characteristics include a gate-source voltage rating of ±20V and an input capacitance of 5500pF at 25V. The maximum power dissipation is 183W at 25°C case temperature. The thermal resistance from junction to case is 0.82°C/W, and junction to ambient is 46°C/W when mounted on a 1" square PCB.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is -40V.
This component is housed in a PowerPAK SO-8L surface-mount package.
The operating junction and storage temperature range spans from -55°C to +175°C.
The gate-source threshold voltage is 2.5V measured at a drain current of 250µA.
The maximum gate charge is 120nC at a gate-source voltage of 10V.
The maximum power dissipation is 183W at a case temperature of 25°C.