Mfr Part #:

SQJ138EP-T1_GE3

Mfr Name: Vishay

The Vishay Dale SQJ138EP-T1_GE3 is an N-Channel MOSFET with a 40V drain-to-source voltage and a continuous current rating of 330A. It features a low Rds On of 1.8mOhm at 15A, 10V.

✓ Total Stock: 43,830 pcs

$ Price Range: $2.56

SQJ138EP-T1_GE3 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Risen Electronics ✓ Non-Authorised Inventory information	27,000 pcs On Request	27000 pcs	On Request	1	On Request	On Request	On Request	On Request	2026-02-16 21:33:16
Optech Co.,Limited ✓ Non-Authorised Inventory information	13,020 pcs On Request	13020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	2,810 pcs On Request	2810 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SQJ138EP-T1_GE3 Description

Short technical summary and product information.

This Vishay Dale SQJ138EP-T1_GE3 is an N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 40V and can handle a continuous current of 330A at a case temperature (Tc).

The MOSFET exhibits a maximum on-resistance (Rds On) of 1.8mOhm when driven at 10V with a drain current of 15A. The gate charge (Qg) is 81nC maximum at 10V, and the gate threshold voltage (Vgs(th)) is 3.5V maximum at 250µA.

Packaged in a PowerPAK SO-8 surface mount case, this component operates within a temperature range of -55°C to 175°C (TJ). Its high power dissipation capability of 312W (Tc) makes it suitable for demanding applications.

Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are currently unverified.

SQJ138EP-T1_GE3 Quick Information

Product Type: MOSFET

Series: SQJ138EP

Canonical Name: Vishay Dale SQJ138EP-T1_GE3 N-Channel MOSFET

Subcategory: N-Channel

SQJ138EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

SQJ138EP-T1_GE3 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ138EP-T1_GE3 Features

40V drain-to-source voltage rating.
330A continuous current capability.
Low 1.8mOhm Rds On.
PowerPAK SO-8 surface mount package.
Wide -55°C to 175°C operating temperature.

SQJ138EP-T1_GE3 Applications

Suitable for high-power switching.
Used in power management circuits.
Ideal for DC-DC converters.
Applications requiring low on-resistance.

SQJ138EP-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the SQJ138EP-T1_GE3?

40 V maximum.

What is the package type of the SQJ138EP-T1_GE3?

PowerPAK SO-8 surface mount package.

What is the operating temperature range?

-55°C to 175°C (junction temperature).

What is the maximum continuous drain current?

330 A at Tc.

What is the typical gate charge?

81 nC at Vgs = 10 V.

What is the maximum Rds(on) value?

1.8 mOhm at Id = 15 A, Vgs = 10 V.

What is the gate threshold voltage?

3.5 V maximum at Id = 250 µA.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	330A (Tc)
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4715 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	312W (Tc)
Rds On (Max) @ Id, Vgs	1.8mOhm @ 15A, 10V
SVHC Present	Not Present
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 250µA