| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | 18+22+ | On Request | On Request |
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The Vishay Dale SQD90P04-9M4L_GE3 is a P-Channel TrenchFET Power MOSFET with a drain-source voltage rating of 40V. It is designed for high-performance applications, featuring a low on-resistance of 9.4mOhm at 17A and 10V Vgs. The continuous drain current capability is 90A at 25°C, reducing to 52A at 125°C.
This MOSFET operates over a wide temperature range from -55°C to 175°C. It is housed in a TO-252AA package, also known as DPak, suitable for surface mounting. The device boasts a maximum power dissipation of 136W at 25°C case temperature and features low thermal resistance.
Key electrical characteristics include a gate-source threshold voltage of 1.5V typical and a maximum of 2.5V. The input capacitance is rated at 6675 pF at 20V, and the gate charge is 155 nC at 10V. The device is 100% R_g and UIS tested and AEC-Q101 qualified, indicating its suitability for automotive applications.
It is constructed using MOSFET (Metal Oxide) technology and is available in lead (Pb)-free and halogen-free packaging, aligning with environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Maximum drain-source voltage is 40V.
It is available in a TO-252AA (DPak) surface mount package.
The operating junction temperature range is -55°C to 175°C.
90A at 25°C case temperature, package limited.
Maximum 9.4 milliohms at Vgs=10V, Id=17A.
Typical 1.5V, maximum 2.5V at Id=250µA.
Maximum 155 nC at Vgs=10V.