SQD50P08-25L_GE3 The Vishay Dale SQD50P08-25L_GE3 is a P-Channel MOSFET with an 80V drain-source voltage rating and a continuous drain current of 50A. It is housed in a surface-mount TO-252 package.
Mfr Part #:

SQD50P08-25L_GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQD50P08-25L_GE3 is a P-Channel MOSFET with an 80V drain-source voltage rating and a continuous drain current of 50A. It is housed in a surface-mount TO-252 package.
✓ Total Stock: 2,007 pcs
$ Price Range: $2.56

SQD50P08-25L_GE3 Available from 3 distributors

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✓ Non-Authorised
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2,000 pcs
2000 pcs On Request 1 On Request On Request 2025+ On Request On Request
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6 pcs
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1 pcs
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SQD50P08-25L_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQD50P08-25L_GE3 Description

Short technical summary and product information.

The Vishay Dale SQD50P08-25L_GE3 is a P-Channel TrenchFET Power MOSFET designed for demanding applications. It offers a drain-source breakdown voltage of 80V and a continuous drain current capability of 50A at 25°C, derating to 28A at 125°C. The MOSFET exhibits a low on-resistance of 0.025 Ohms at 10V gate-source voltage and 10.5A drain current.

 

This device operates over a wide temperature range from -55°C to 175°C. It features a maximum power dissipation of 136W at 25°C. The SQD50P08-25L_GE3 is supplied in a TO-252-3, DPak surface-mount package, making it suitable for space-constrained designs. It is AEC-Q101 qualified and 100% Rg and UIS tested, indicating its suitability for automotive applications.

 

Key electrical characteristics include a gate threshold voltage of 1.5V typical, a maximum gate-source voltage of ±20V, and an input capacitance of 5350 pF. The device also has a gate charge of 137 nC. Its thermal resistance is rated at 50°C/W junction-to-ambient and 1.1°C/W junction-to-case.

SQD50P08-25L_GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: Vishay Dale SQD50P08-25L_GE3 P-Channel 80V 50A TrenchFET Power MOSFET
Subcategory: Power MOSFET

SQD50P08-25L_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SQD50P08-25L_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQD50P08-25L_GE3 Features

  • P-Channel TrenchFET Power MOSFET
  • 80V Drain-Source Voltage Rating
  • 50A Continuous Drain Current
  • Low On-Resistance: 0.025 Ohm
  • AEC-Q101 Qualified

SQD50P08-25L_GE3 Applications

  • Suitable for automotive applications
  • Power switching circuits
  • High-efficiency power designs
  • Compact surface-mount solutions

SQD50P08-25L_GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SQD50P08-25L_GE3?

The maximum drain-source voltage is 80V.

What is the continuous drain current of the SQD50P08-25L_GE3 at 25°C?

The continuous drain current is 50A at 25°C.

What is the typical on-resistance of the SQD50P08-25L_GE3?

The typical on-resistance is 0.025 Ohms at 10.5A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the SQD50P08-25L_GE3 supplied in?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

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