| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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20,274 pcs
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20274 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request |
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This P-Channel MOSFET from Vishay Dale, part number SQD50P06-15L_T4GE3, is engineered for high-performance power management. It features a robust design with a 60V drain-source voltage rating and a low on-resistance of 15.5mOhm at 17A and 10V.
The device operates across a wide temperature range from -55C to 175C, making it suitable for challenging environments. Its TrenchFET power MOSFET technology ensures low thermal resistance and high efficiency.
Packaged in a surface-mount TO-252-3, DPak (2 Leads + Tab), SC-63 package, the SQD50P06-15L_T4GE3 is designed for ease of integration into PCB layouts. It boasts a continuous drain current of 50A at 25C and a maximum power dissipation of 136W at 25C.
Key electrical characteristics include a gate-source threshold voltage of 2.5V maximum and a gate charge of 150nC maximum. The MOSFET is also 100% R_g and UIS tested, and AEC-Q101 qualified, ensuring reliability and performance in automotive and industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60 V.
The Rds On is a maximum of 15.5 mOhm at 17A and 10V.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package for surface mounting.
Yes, the RoHS status is RoHS3 Compliant.