| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,733 pcs
|
2733 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQD50N06-09L_GE3 is an N-Channel MOSFET with a drain-source voltage rating of 60V and a continuous drain current capability of 50A. This device utilizes MOSFET technology and is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.
Key electrical characteristics include a maximum on-resistance of 9mOhm at 20A and 10V, a gate charge of 72nC at 10V, and an input capacitance of 3065pF at 25V. The gate threshold voltage is 2.5V at 250µA, with a maximum gate-source voltage limit of ±20V. The device can dissipate up to 136W at the case temperature.
Operating within a temperature range of -55°C to 175°C (TJ), the SQD50N06-09L_GE3 is suitable for various power management applications. Its surface mount design facilitates integration into compact electronic assemblies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V.
TO-252-3, DPak (2 Leads + Tab), SC-63, supplier package TO-252AA.
-55°C to 175°C.
50 A at Tc.
9 mOhm at 20A, 10V.
72 nC at 10V.
2.5V at 250µA.