| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24,000 pcs
|
24000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Package / Case | |
| SVHC Present |
The Vishay Dale SQD50N03-06P-GE3 is an automotive-qualified N-Channel Power MOSFET featuring TrenchFET technology. It offers a drain-source breakdown voltage of 30V and a low on-resistance of 0.0060Ω at VGS = 10V and 0.0085Ω at VGS = 4.5V. The continuous drain current is rated at 50A.
This MOSFET is designed for high-performance applications, with features such as 100% Rg and UIS tested. It operates within a junction temperature range of -55°C to +175°C. The device is housed in a TO-252 package, suitable for surface mounting.
Key electrical characteristics include a gate-source threshold voltage between 1.5V and 2.5V. The maximum power dissipation is 83W at 25°C case temperature. The component is lead (Pb)-free and halogen-free, meeting stringent environmental standards.
The drain-source breakdown voltage is 30V.
The typical on-resistance is 0.0060Ω at VGS = 10V and 0.0085Ω at VGS = 4.5V.
The continuous drain current is 50A at 25°C and 50A at 125°C.
The operating junction and storage temperature range is -55°C to +175°C.
This MOSFET is in a TO-252 package.
Yes, this MOSFET is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.