SMF28A-GS08
Vishay
The Vishay Dale SMF28A-GS08 is a TVS diode designed for transient voltage suppression. It offers a 28V operating voltage and 200W peak pulse power capability.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,520 pcs
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1520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The Vishay Dale SQD50N02-04 is an automotive-grade N-Channel MOSFET designed for demanding applications. It features TrenchFET Power MOSFET technology, providing a low thermal resistance package.
Key electrical specifications include a 20V drain-source voltage (Vds) and a low on-resistance (RDS(on)) of 0.0043 Ω at Vgs = 10V and 0.006 Ω at Vgs = 4.5V. The continuous drain current (ID) is rated at 50A.
This MOSFET operates over a wide temperature range from -55°C to +175°C. It is supplied in a TO-252 package suitable for surface mounting. The device is also compliant with RoHS and Halogen-free standards.
Designed for reliability, the SQD50N02-04 is 100% R_g and UIS tested and AEC-Q101 qualified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The SQD50N02-04 has a Drain-Source Voltage (Vds) of 20V and a Gate-Source Voltage (Vgs) of ±20V.
The SQD50N02-04 is supplied in a TO-252 package.
The operating junction and storage temperature range for the SQD50N02-04 is -55 °C to +175 °C.
The Drain-Source Breakdown Voltage is a minimum of 20 V, measured at Vgs = 0 V and Id = 250 μA.
The typical Gate-Source Threshold Voltage is 2.0 V, with a minimum of 1.5 V and a maximum of 2.5 V, measured at Vds = Vgs and Id = 250 μA.
The Continuous Drain Current is 50 A at both Tc = 25 °C and Tc = 125 °C.
The typical On-Resistance is 0.0043 Ω when Vgs = 10 V and 0.006 Ω when Vgs = 4.5 V.