| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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241,067 pcs
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241067 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay SQD40N04-10A is a high-performance N-channel power MOSFET. It is designed for general-purpose power applications and features a breakdown voltage of 40V and a maximum continuous drain current of 42A. The device exhibits a low maximum on-resistance of 0.014 ohm, contributing to efficient power handling.
This MOSFET utilizes Metal-Oxide Semiconductor (MOS) FET technology and operates in enhancement mode. It is housed in a TO-252 small outline package, suitable for surface mounting. The package is constructed from plastic/epoxy and features gull wing terminals with a matte tin finish.
Key electrical characteristics include a maximum pulsed drain current of 168A and an avalanche energy rating of 45 mJ. The transistor element is made of silicon. The device is compliant with RoHS3 standards and is lead-free and halogen-free.
This component is ideal for various power switching and control applications where reliable performance and efficient operation are required. Its surface-mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 40 V.
The maximum continuous drain current is 42 A.
The maximum drain-source on-resistance is 0.014 ohm.
The SQD40N04-10A is supplied in a TO-252 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.