| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,020 pcs
|
3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SQD40031EL_GE3 is a P-Channel enhancement-mode MOSFET from Vishay Dale, designed for high-efficiency power management applications. It offers a drain-source breakdown voltage of -30V and a continuous drain current of -100A at 25°C case temperature, making it suitable for medium-voltage switching and load switching tasks.
Key electrical characteristics include a maximum drain-source on-resistance of 3.2mOhm at VGS = -10V and 5.2mOhm at VGS = -4.5V, enabling low conduction losses. The device features a typical input capacitance of 15000pF and a maximum gate charge of 280nC at 10V, which influences switching performance. It is capable of handling pulsed drain currents up to -300A.
The MOSFET is housed in a TO252AA (DPAK) surface-mount package, suitable for automated assembly. It is designed for use in power supply circuits, DC-DC converters, and motor control applications where P-Channel switching is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -30V at VGS = 0V, ID = -250μA.
The maximum continuous drain current is -100A at TC = 25°C and -94A at TC = 125°C.
The maximum drain-source on-resistance is 3.2mOhm at ID = 30A, VGS = -10V, and 5.2mOhm at ID = 30A, VGS = -4.5V.
The gate-source threshold voltage ranges from a minimum of -1.5V to a maximum of -2.5V, with a typical value of -2.0V at VDS = VGS, ID = -250μA.
The typical input capacitance is 15000pF at VDS = -15V, VGS = 0V, f = 1MHz.
The maximum gate charge is 280nC at VGS = -10V.