| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The Vishay Dale SQD30N05-20L_GE3 is an N-Channel power MOSFET designed for demanding applications. It features a drain-source voltage (VDS) of 55V and a continuous drain current (ID) of 30A at 25°C.
Key electrical characteristics include a low on-resistance (RDS(on)) of 20mOhm at a gate-source voltage (VGS) of 10V, and 26mOhm at 4.5V. The device has a gate-source threshold voltage (VGS(th)) of 2.5V maximum at 250µA and a gate charge (Qg) of 18nC maximum at 5V.
This MOSFET operates within a junction and storage temperature range of -55°C to +175°C. It is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, offering efficient thermal performance with a junction-to-case thermal resistance of 3°C/W.
The SQD30N05-20L_GE3 is AEC-Q101 qualified and manufactured using TrenchFET® technology, ensuring high performance and reliability for automotive and industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 55V at VGS = 0V and ID = 250 µA.
The maximum continuous drain current is 30A at a case temperature of 25°C.
The maximum on-resistance is 20 mOhm at ID = 20A and VGS = 10V, and 26 mOhm at ID = 20A and VGS = 4.5V.
The operating junction and storage temperature range is -55°C to +175°C.
It is available in a surface-mount TO-252-3 (DPak) package, also known as TO-252AA.
The maximum power dissipation is 50W at a case temperature of 25°C.
The typical gate-source threshold voltage is 2V, with a maximum of 2.5V at VDS = VGS and ID = 250 µA.