SQD25N15-52_GE3 The Vishay Dale SQD25N15-52_GE3 is an N-Channel MOSFET designed for power applications. It features a 150V drain-source voltage and a continuous drain current of 25A.
Mfr Part #:

SQD25N15-52_GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQD25N15-52_GE3 is an N-Channel MOSFET designed for power applications. It features a 150V drain-source voltage and a continuous drain current of 25A.
✓ Total Stock: 324,036 pcs
$ Price Range: $2.56

SQD25N15-52_GE3 Available from 4 distributors

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282,000 pcs
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SQD25N15-52_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQD25N15-52_GE3 Description

Short technical summary and product information.

The Vishay Dale SQD25N15-52_GE3 is an automotive-qualified N-Channel power MOSFET utilizing TrenchFET technology. It offers a 150V drain-source voltage and a continuous drain current of 25A at 25°C.

 

Key electrical characteristics include a maximum on-state resistance of 52mOhm at 15A and 10V gate-source voltage, and a gate charge of 51nC. The device operates over a wide temperature range from -55°C to +175°C.

 

Packaged in a TO-252-3 surface-mount package, this MOSFET is suitable for various power switching and control applications where high efficiency and thermal performance are critical. Its low thermal resistance package contributes to efficient heat dissipation.

 

The SQD25N15-52_GE3 is AEC-Q101 qualified, indicating its suitability for demanding automotive environments. It also features 100% R_g and UIS testing for enhanced reliability.

SQD25N15-52_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQD25N15-52_GE3 N-Channel MOSFET
Subcategory: N-Channel

SQD25N15-52_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQD25N15-52_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQD25N15-52_GE3 Features

  • Automotive N-Channel 150V MOSFET
  • TrenchFET power MOSFET technology
  • Low thermal resistance package
  • AEC-Q101 qualified
  • TO-252 surface mount package

SQD25N15-52_GE3 Applications

  • Suitable for automotive applications
  • Power switching circuits
  • High efficiency designs
  • General purpose power control

SQD25N15-52_GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SQD25N15-52_GE3?

150 V minimum.

What is the package type of this MOSFET?

TO-252-3 (DPak) surface-mount.

What is the operating junction temperature range?

-55°C to +175°C.

What is the continuous drain current rating?

25 A at 25°C case temperature.

What is the maximum power dissipation?

107 W at 25°C case temperature.

What is the typical gate threshold voltage?

3 V.

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