| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,020 pcs
|
10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SQA410EJ-T1_GE3 is an automotive-qualified N-Channel Power MOSFET designed for high-performance applications. It operates at a drain-source voltage of 20V and can handle a continuous drain current of 7.8A.
Key electrical characteristics include a maximum Rds(on) of 28mOhm at 4.5V Vgs, and a gate charge of 8nC. The MOSFET utilizes Vishay's TrenchFET technology for improved performance and efficiency.
This device is housed in a PowerPAK SC-70-6 package, suitable for surface mounting. It operates across a wide temperature range from -55°C to 175°C and is compliant with RoHS directives.
The SQA410EJ-T1_GE3 is AEC-Q101 qualified, making it suitable for demanding automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 20V.
The continuous drain current is 7.8A.
The Rds(on) is a maximum of 28mOhm at 5A, Vgs 4.5V.
The operating temperature range is -55°C to 175°C.
It is in a PowerPAK SC-70-6 package.
Yes, the SQA410EJ-T1_GE3 is AEC-Q101 qualified.