| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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278,154 pcs
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278154 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ9945AEY-T1-E3 is a dual N-channel MOSFET designed for various applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 3.7A at 25°C.
The MOSFET exhibits a low on-state resistance of 80mOhm at a drain current of 3.7A and a gate-source voltage of 10V. The gate charge is rated at a maximum of 20nC at 10V. It operates within a wide temperature range of -55°C to 175°C.
This component is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package. The maximum power dissipation is 2.4W at 25°C case temperature. The gate-source threshold voltage is a maximum of 3V at 250µA.
It is suitable for applications requiring efficient switching and power handling within its specified voltage and current ratings. The dual N-channel configuration offers flexibility in circuit design.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 60 V.
The continuous drain current is 3.7 A at case temperature 25°C.
The maximum drain-source on-resistance is 80 mOhm at Id=3.7 A, Vgs=10 V.
The maximum gate-source threshold voltage is 3 V at Id=250 µA.
The operating junction temperature range is -55°C to 175°C.
The maximum gate charge is 20 nC at Vgs=10 V.
It is available in an 8-SOIC (0.154", 3.90mm width) surface mount package.