SQ4940AEY-T1_GE3 The Vishay Dale SQ4940AEY-T1_GE3 is a dual N-channel MOSFET designed for automotive applications. It offers a 40V drain-source voltage and 8A continuous drain current.
Mfr Part #:

SQ4940AEY-T1_GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQ4940AEY-T1_GE3 is a dual N-channel MOSFET designed for automotive applications. It offers a 40V drain-source voltage and 8A continuous drain current.
✓ Total Stock: 212,806 pcs
$ Price Range: $1.64

SQ4940AEY-T1_GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
212,706 pcs
212706 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
100 pcs
100 pcs On Request 1 On Request On Request On Request On Request On Request

SQ4940AEY-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

SQ4940AEY-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQ4940AEY-T1_GE3 is a dual N-channel power MOSFET featuring TrenchFET technology. It is rated for a 40V drain-source voltage and can handle a continuous drain current of 8A at 25°C. The MOSFET exhibits a low on-resistance of 24mΩ at 10V Vgs and 5.3A Id, and 29mΩ at 4.5V Vgs. It operates over a wide temperature range of -55°C to 175°C.

 

This component is housed in an 8-SOIC package and is suitable for surface mounting. The device is AEC-Q101 qualified, indicating its suitability for automotive applications. It also features a logic level gate, making it compatible with lower gate drive voltages.

 

Key electrical characteristics include a gate-source threshold voltage of 2.5V maximum and input capacitance of 741pF. The device is designed for high efficiency and reliability in demanding environments. It is also specified as Lead (Pb)-free and halogen-free.

SQ4940AEY-T1_GE3 Quick Information

Product Type: MOSFET Array
Canonical Name: Vishay Dale SQ4940AEY-T1_GE3 Dual N-Channel MOSFET
Subcategory: Array

SQ4940AEY-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SQ4940AEY-T1_GE3 Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQ4940AEY-T1_GE3 Features

  • Dual N-Channel MOSFET technology.
  • 40V drain-source voltage rating.
  • 8A continuous drain current.
  • Low on-resistance of 24mΩ.
  • AEC-Q101 qualified for automotive use.

SQ4940AEY-T1_GE3 Applications

  • Suitable for automotive power management.
  • Ideal for DC-DC converter applications.
  • Used in load switch circuits.
  • Applicable in battery management systems.

SQ4940AEY-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SQ4940AEY-T1_GE3?

The drain-source breakdown voltage is 40V.

What is the maximum continuous drain current for this MOSFET?

The continuous drain current is 8A at 25°C.

What is the typical on-resistance at VGS = 10V?

The typical on-resistance is 0.024Ω at VGS = 10V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the SQ4940AEY-T1_GE3 supplied in?

It is supplied in an 8-SOIC package.

Is this MOSFET AEC-Q101 qualified?

Yes, this MOSFET is AEC-Q101 qualified.

What is the RoHS status of this component?

The RoHS status is RoHS3 Compliant.

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